2SC3063
P
C
T
a
1.6
120
Without heat sink
100
T
C
=25˚C
I
B
=2.0mA
1.6mA
Power Transistors
I
C
V
CE
240
V
CE
=10V
200
25˚C
T
C
=100˚C
160
–25˚C
I
C
V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(mA)
1.2
80
1.0mA
0.8mA
0.6mA
0.8
60
0.4mA
40
0.2mA
20
Collector current I
C
(mA)
1.2mA
120
80
0.4
40
0
0
20
40
60
80 100 120 140 160
0
0
10
20
30
40
50
60
0
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature T
a
(˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
3
I
C
/I
B
=10
1000
h
FE
I
C
240
V
CE
=50V
220
f
T
I
E
V
CB
=30V
f=200MHz
T
C
=25˚C
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
30
100
300
200
180
160
140
120
100
80
60
40
20
1
300
25˚C
T
C
=100˚C
100
–25˚C
30
0.3
0.1
T
C
=100˚C
25˚C
–25˚C
10
0.03
3
0.01
1
3
10
30
100
1
1
3
10
0
–1
–3
–10
–30
–100
Collector current I
C
(mA)
Collector current I
C
(mA)
Emitter current I
E
(mA)
C
ob
V
CB
10
1000
I
E
=0
f=1MHz
T
C
=25˚C
Area of safe operation (ASO)
Single pulse
T
C
=25˚C
Collector output capacitance C
ob
(pF)
300 I
CP
Collector current I
C
(A)
8
100
30
10
3
1
0.3
t=2ms
I
C
t=1s
6
4
2
0
1
3
10
30
100
300
1000
0.1
1
3
10
30
100
300
1000
Collector to base voltage V
CB
(V)
Collector to emitter voltage V
CE
(V)
194
PANASONIC [ PANASONIC SEMICONDUCTOR ]
