Horizontal Deflection Output Transistor
2SC5519
s
Absolute Maximum Ratings
Unit:mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
I
B
P
C
T
j
Rating
1700
1700
5
16
*3
Unit
4.5
15.5±0.5
φ3.2±0.1
3.0±0.3
10.0
V
V
V
A
A
A
5°
5°
26.5±0.5
2.0 1.2
5°
5°
5°
8
3
50
3
*2
*1
18.6±0.5
4.0
2.0±0.2
1.1±0.1
2.0
0.7±0.1
5.45±0.3
5.45±0.3
3.3±0.3
0.7±0.1
5°
150
-55 to +150
°C
°C
1
2
3
*1)TC=25°C ,*2)Ta=25°C(Without heat sink)
*3)Non-repetitive peak collector current.
s
Electrical Characteristics(T
C
=25°C)
Parameter
Collector cutoff current
I
CBO
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation voltage
Symbol
I
CBO
Conditions
V
CB
=1000V,I
E
=0
V
CB
=1700V,I
E
=0
I
E
=500mA,I
C
=0
V
CE
=5V,I
C
=6A
I
C
=6A,I
B
=1.2A
I
C
=6A,I
B
=1.2A
V
CE
=10V,I
C
=0.1A,f=0.5MHz
I
C
=6A,I
B1
=1.2A,I
B2
=-2.4A
I
C
=6A,I
B1
=1.2A,I
B2
=-2.4A
min
-
-
5
5
-
-
-
-
-
-
typ
-
-
-
-
-
-
3
-
-
-
2.0
TOP-3E
5.5±0.3
W
max
50
1
-
10
3
1.5
-
5.0
0.5
-2
Unit
µA
mA
V
V
EBO
f
FE
V
CE(sat)
V
BE(sat)
f
T
T
stg
T
f
V
F
Transition frequency
Storage time
Fall time
Diode characteristics
MHz
µs
µs
V
I
F
=6A
23.4
22.0±0.5
V
V
PANASONIC [ PANASONIC SEMICONDUCTOR ]
