Power Transistors
2SC5597
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
(10.0) (6.0)
(2.0)
(4.0)
20.0
±0.5
φ
3.3
±0.2
5.0
±0.3
(3.0)
20.0
±0.5
(2.5)
Solder Dip
•
High breakdown voltage, and high reliability through the use of a
glass passivation layer
•
High-speed switching
•
Wide area of safe operation (ASO)
26.0
±0.5
(3.0)
(1.5)
2.0
±0.3
3.0
±0.3
1.0
±0.2
0.6
±0.2
5.45
±0.3
10.9
±0.5
(1.5)
2.7
±0.3
1
2
3
I
Features
I
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector to base voltage
Collector to emitter voltage
Symbol
V
CBO
V
CES
V
CEO
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
T
C
=
25°C
T
a
=
25°C
T
j
T
stg
V
EBO
I
CP
I
C
I
B
P
C
Rating
1 700
1 700
600
7
30
22
11
200
3.5
150
−55
to
+150
°C
°C
Unit
V
V
V
V
A
A
A
W
(1.5)
1: Base
2: Collector
3: Emitter
TOP-3L Package
Marking Symbol: C5597
Internal Connection
C
B
Junction temperature
Storage temperature
E
I
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector cutoff current
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
=
1 000 V, I
E
=
0
V
CB
=
1 700 V, I
E
=
0
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
V
EB
=
7 V, I
C
=
0
V
CE
=
5 V, I
C
=
11 A
I
C
=
11 A, I
B
=
2.75 A
I
C
=
11 A, I
B
=
2.75 A
V
CE
=
10 V, I
C
=
0.1 A, f
=
0.5 MHz
I
C
=
11 A, Resistance loaded
I
B1
=
2.75 A, I
B2
= −5.5
A
3
3.0
0.2
6
Min
Typ
Max
50
1
50
12
3
1.5
V
V
MHz
µs
µs
Unit
µA
mA
µA
(2.0)
1