Power Transistors
2SB1299
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1273
0.7±0.1
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
Unit: mm
4.2±0.2
s
Features
q
q
q
High foward current transfer ratio h
FE
Satisfactory linearity of foward current transfer ratio h
FE
Full-pack package which can be installed to the heat sink with
one screw
7.5±0.2
16.7±0.3
φ3.1±0.1
14.0±0.5
s
4.0
Absolute Maximum Ratings
(T
C
=25˚C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
Ta=25°C
P
C
T
j
T
stg
Ratings
–60
–60
–6
–6
–3
–1
40
2
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
1.4±0.1
1.3±0.2
Solder Dip
0.5
+0.2
–0.1
0.8±0.1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25°C
dissipation
Junction temperature
Storage temperature
2.54±0.25
5.08±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
*
h
(T
C
=25˚C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE*
V
CE(sat)
f
T
Conditions
V
CB
= –60V, I
E
= 0
V
CE
= –40V, I
B
= 0
V
EB
= –6V, I
C
= 0
I
C
= –25mA, I
B
= 0
V
CE
= –4V, I
C
= – 0.5A
I
C
= –2A, I
B
= – 0.05A
V
CE
= –12V, I
C
= – 0.2A, f = 10MHz
30
–60
300
700
–1
V
MHz
min
typ
max
–100
–100
–100
Unit
µA
µA
µA
V
FE
Rank classification
Q
300 to 500
P
400 to 700
h
FE
Rank
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
