Power Transistors
2SB950, 2SB950A
Silicon PNP epitaxial planar type Darlington
4.2±0.2
For power amplification and switching
Complementary to 2SD1276 and 2SD1276A
0.7±0.1
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
Unit: mm
7.5±0.2
s
Features
q
q
q
High foward current transfer ratio h
FE
High-speed switching
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25˚C)
Ratings
–60
–80
–60
–80
–5
–8
–4
40
2
150
–55 to +150
Unit
V
16.7±0.3
φ3.1±0.1
14.0±0.5
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB950
2SB950A
2SB950
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
4.0
1.4±0.1
1.3±0.2
Solder Dip
0.5
–0.1
0.8±0.1
+0.2
2.54±0.25
5.08±0.5
1
2
emitter voltage 2SB950A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
V
V
A
A
W
˚C
˚C
B
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
3
Internal Connection
C
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SB950
2SB950A
2SB950
2SB950A
2SB950
2SB950A
E
(T
C
=25˚C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
BE
V
CE(sat)1
V
CE(sat)2
f
T
t
on
t
stg
t
f
Conditions
V
CB
= –60V, I
E
= 0
V
CB
= –80V, I
E
= 0
V
CE
= –30V, I
B
= 0
V
CE
= –40V, I
B
= 0
V
EB
= –5V, I
C
= 0
I
C
= –30mA, I
B
= 0
V
CE
= –3V, I
C
= – 0.5A
V
CE
= –3V, I
C
= –3A
V
CE
= –3V, I
C
= –3A
I
C
= –3A, I
B
= –12mA
I
C
= –5A, I
B
= –20mA
V
CE
= –10V, I
C
= – 0.5A, f = 1MHz
I
C
= –3A, I
B1
= –12mA, I
B2
= 12mA,
V
CC
= –50V
20
0.3
2
0.5
–60
–80
1000
2000
10000
–2.5
–2
–4
V
V
V
MHz
µs
µs
µs
min
typ
max
–200
–200
–500
–500
–2
Unit
µA
µA
mA
V
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE2
Rank classification
Q
P
2000 to 5000 4000 to 10000
Rank
h
FE2
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
