Power Transistors
2SD2453
Silicon NPN triple diffusion planar type
Unit: mm
For high current transfer ratio and power amplification
■
Features
•
High forward current transfer ratio h
FE
•
Low collector-emitter saturation voltage V
CE(sat)
6.5
±0.1
5.3
±0.1
4.35
±0.1
2.3
±0.1
0.5
±0.1
7.3
±0.1
1.8
±0.1
0.8 max.
2.5
±0.1
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
*
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Note) Non-repetitive peak collector current
T
j
T
stg
T
C
=
25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Rating
80
60
6
2
4
1
10
1
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
A
W
0.75
±0.1
2.3
±0.1
4.6
±0.1
1.0
±0.1
0.1
±0.05
0.5
±0.1
(5.3)
(4.35)
(3.0)
(1.8)
1
2
3
1.0
±0.2
1: Base
2: Collector
3: Emitter
EIAJ: SC-63
U-G2 Package
Note) Self-supported type package is also prepared.
■
Electrical Characteristics
T
a
=
25°C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emiter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Symbol
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
f
T
Conditions
I
C
=
25 mA, I
B
=
0
V
CB
=
80 V, I
E
=
0
V
CE
=
40 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
4 V, I
C
=
0.5 A
I
C
=
2 A, I
B
=
0.05 A
V
CE
=
12 V, I
C
=
0.2 A, f
=
10 MHz
50
500
Min
60
100
100
100
2 500
1
Typ
Max
Unit
V
µA
µA
µA
V
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
500 to 1 000
R
800 to 1 500
S
1 200 to 2 500
(5.5)
Publication date: September 2003
SJD00268AED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
