Transistors
2SD0874, 2SD0874A
(2SD874, 2SD874A)
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A)
■
Features
•
Large collector power dissipation P
C
•
Low collector-emitter saturation voltage V
CE(sat)
•
Mini power type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing
1
4.5
±0.1
1.6
±0.2
1.5
±0.1
Unit: mm
4.0
+0.25
–0.20
2.5
±0.1
3˚
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage
(Emitter open)
2SD0874
2SD0874A
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Symbol
V
CBO
Rating
30
60
25
50
5
1
1.5
1
150
−55
to
+150
V
A
A
W
°C
°C
V
Unit
V
1.0
+0.1
–0.2
0.4
±0.08
1.5
±0.1
3˚
3
2
0.5
±0.08
0.4
±0.04
45˚
Collector-emitter voltage 2SD0874
(Base open)
2SD0874A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
*
Junction temperature
Storage temperature
3.0
±0.15
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Marking Symbol:
•
2SD0874: Z
•
2SD0874A: Y
Note) *: Printed circuit board: Copper foil area of 1 cm
2
or more, and the
board thickness of 1.7 mm for the collector portion
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
2SD0874
2SD0874A
2SD0874
2SD0874A
V
EBO
I
CBO
h
FE1 *2
h
FE2
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
V
BE(sat)
f
T
C
ob
I
E
=
10
µA,
I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
C
=
500 mA
V
CE
=
5 V, I
C
=
1 A
I
C
=
500 mA, I
B
=
50 mA
I
C
=
500 mA, I
B
=
50 mA
V
CB
=
10 V, I
E
= −50
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
85
50
0.2
0.85
200
20
0.4
1.2
V
V
MHz
pF
V
CEO
I
C
=
2 mA, I
B
=
0
Symbol
V
CBO
Conditions
I
C
=
10
µA,
I
E
=
0
Min
30
60
25
50
5
0.1
340
V
µA
V
Typ
Max
Unit
V
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
Q
85 to 170
R
120 to 240
S
170 to 340
Note) The part numbers in the parenthesis show conventional part number.
Publication date: November 2002
SJC00197CED
0.4 max.
2.6
±0.1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
