Transistor
2SB789, 2SB789A
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SD968 and 2SD968A
Unit: mm
s
Features
q
q
2.6±0.1
4.5±0.1
1.6±0.2
1.5±0.1
0.4max.
45°
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB789
2SB789A
2SB789
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Symbol
(Ta=25˚C)
Ratings
–100
–120
–100
–120
–5
–1
–0.5
1
150
–55 ~ +150
Unit
V
3
1.0
–0.2
+0.1
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
2
1
4.0
–0.20
0.4±0.04
emitter voltage 2SB789A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
V
marking
V
A
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol :
D
(2SB789)
E
(2SB789A)
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector to emitter
voltage
2SB789
2SB789A
(Ta=25˚C)
Symbol
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
Cob
Conditions
I
C
= –100µA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –10V, I
C
= –150mA
V
CE
= –5V, I
C
= –500mA
I
C
= –500mA, I
B
= –50mA
I
C
= –500mA, I
B
= –50mA
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–100
–120
–5
90
50
– 0.2
– 0.85
120
30
– 0.6
–1.2
V
V
MHz
pF
220
typ
max
Unit
V
V
Collector to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
FE1
Rank classification
Rank
h
FE1
Q
90 ~ 155
2SB789
2SB789A
DQ
EQ
R
130 ~ 220
DR
ER
Marking
Symbol
2.5±0.1
+0.25
High collector to emitter voltage V
CEO
.
Large collector power dissipation P
C
.
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
