Silicon Junction FETs (Small Signal)
2SK0198
(2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
0.40
+0.10
–0.05
Unit: mm
0.16
+0.10
–0.06
s
Features
q
High mutual conductance g
m
q
Low noise type
q
Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
3
1.50
+0.25
–0.05
2.8
+0.2
–0.3
1
2
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
10˚
1.1
+0.2
–0.1
Drain to Source voltage
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
V
DSX
V
GDO
I
D
I
G
P
D
T
ch
T
stg
30
−30
20
10
150
150
−55
to
+150
V
V
mA
mA
mW
°C
°C
1: Source
2: Drain
3: Gate
0 to 0.1
Parameter
Symbol
Ratings
Unit
1.1
+0.3
–0.1
s
Absolute Maximum Ratings
(T
a
=
25°C)
(0.65)
JEDEC: TO-236
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol (Example): 1O
s
Electrical Characteristics
(T
a
=
25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Source cut-off voltage
Mutual conductance
Symbol
I
DSS*
I
GSS
V
GSC
g
m
Conditions
V
DS
=
10 V, V
GS
=
0
V
GS
= −30
V, V
DS
=
0
V
DS
=
10 V, I
D
=
10
µA
V
DS
=
10 V, I
D
=
0.5 mA, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DS
=
30 V, I
D
=
1 mA, G
V
=
80 dB
R
g
=
100 kΩ, Function
=
FLAT
−
0.1
4
min
0.5
typ
max
12
−100
−1.5
Unit
mA
nA
V
mS
pF
pF
mV
13
14
3.5
60
Input capacitance (Common Source) C
iss
Reverse transfer capacitance (Common Source) C
rss
Noise figure
NV
*
I
DSS
rank classification
Runk
I
DSS
(mA)
P
0.5 to 3
1OP
Q
2 to 6
1OQ
R
4 to 12
1OR
Marking Symbol
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2002
SJF00006BED
0.4
±0.2
5˚
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
