Power F-MOS FETs
C
iss
, C
oss
, C
rss
V
DS
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) C
iss
,C
oss
,C
rss
(pF)
10000
f=1MHz
T
C
=25˚C
2SK3043
V
DS
, V
GS
Q
g
400
20
120
I
D
=5A
T
C
=25˚C
V
DS
t
d(on)
, t
r
, t
f
, t
d(off)
I
D
V
DD
=150V
V
GS
=10V
T
C
=25˚C
Drain to source voltage V
DS
(V)
Gate to source voltage V
GS
(V)
3000
1000
350
300
250
200
150
100
50
0
0
V
DS
=90V
225V
330V
Switching time t
d(on)
,t
r
,t
f
,t
d(off)
(ns)
100
15
C
iss
300
100
30
10
3
1
0
50
100
150
200
250
C
oss
C
rss
80
t
d(off)
10
60
t
r
40
t
f
t
d(on)
20
V
GS
5
10
20
30
40
50
0
60
0
0
1
2
3
4
5
Drain to source voltage V
DS
(V)
Gate charge amount Q
g
(nC)
Drain current I
D
(A)
R
th(t)
t
10
2
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
(1)
Thermal resistance R
th
(t) (˚C/W)
10
(2)
1
10
–1
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Time t (s)
3