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2SK3049 参数 Datasheet PDF下载

2SK3049图片预览
型号: 2SK3049
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道功率的F- MOS FET [Silicon N-Channel Power F-MOS FET]
分类和应用:
文件页数/大小: 2 页 / 37 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号2SK3049的Datasheet PDF文件第2页  
Power F-MOS FETs
2SK3049
Silicon N-Channel Power F-MOS FET
s
Features
q
Avalanche energy capacity guaranteed
q
High-speed switching
q
Low ON-resistance
q
No secondary breakdown
unit: mm
9.9±0.3
4.6±0.2
2.9±0.2
s
Applications
q
Contactless relay
q
Diving circuit for a solenoid
q
Driving circuit for a motor
q
Control equipment
q
Switching power supply
15.0±0.5
φ3.2±0.1
13.7±0.2
4.2±0.2
1.4±0.2
1.6±0.2
0.8±0.1
3.0±0.5
2.6±0.1
0.55±0.15
s
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
600
±30
±5
±10
62.5
40
2
150
−55
to +150
Unit
V
V
A
A
mJ
W
°C
°C
1
2
2.54±0.3
3 5.08±0.5
1: Gate
2: Drain
3: Source
TO-220D Package
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
*
T
C
= 25°C
Ta = 25°C
L = 5mH, I
L
= 5A, 1 pulse
s
Electrical Characteristics
(T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
oss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 200V, I
D
= 3A
V
GS
= 10V, R
L
= 66.6Ω
Conditions
V
DS
= 480V, V
GS
= 0
V
GS
= ±30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 3A
V
DS
= 25V, I
D
= 3A
I
DR
= 5A, V
GS
= 0
1200
V
DS
= 20V, V
GS
= 0, f = 1MHz
140
40
20
30
150
50
1.7
600
2
0.85
3.4
−1.6
5
1.5
min
typ
max
100
±1
Unit
µA
µA
V
V
S
V
pF
pF
pF
ns
ns
ns
ns
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
1