Silicon MOS FETs (Small Signal)
2SK664
Silicon N-Channel MOS FET
For switching
unit: mm
2.1±0.1
s
Features
q
High-speed switching
q
S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
3
2
0.9±0.1
0 to 0.1
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
50
8
100
200
150
150
−55
to +150
Unit
V
V
mA
mA
mW
°C
°C
0.7±0.1
0.2±0.1
1: Gate
2: Source
3: Drain
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol: 3N
Internal Connection
D
G
S
s
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Symbol
I
DSS
I
GSS
V
DSS
V
th
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= 8V, V
DS
= 0
I
D
= 100µA, V
GS
= 0
I
D
= 100µA, V
DS
= V
GS
I
D
= 20mA, V
GS
= 5V
I
D
= 20mA, V
DS
= 5V, f = 1kHz
V
DS
= 5V, V
GS
= 0, f = 1kHz
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200Ω
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200Ω
10
20
min
typ
max
10
50
50
1.5
20
15
5
1
3.5
50
Unit
µA
µA
V
V
Ω
mS
pF
pF
pF
ns
ns
Drain to Source ON-resistance
R
DS(on)
Forward transfer admittance
| Y
fs
|
Input capacitance (Common Source) C
iss
Output capacitance (Common Source) C
oss
Reverse transfer capacitance (Common Source) C
rss
Turn-on time
t
on*
Turn-off time
*
t
off
V
out
*
t
on
, t
off
measurement circuit
200Ω
V
in
V
DD
= 5V
V
out
10%
10%
90%
t
on
t
off
90%
50Ω
100µF
V
GS
= 5V
0.15
–0.05
+0.1
s
Absolute Maximum Ratings
(Ta = 25°C)
0.2
0.3
–0
+0.1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
