This product complies with the RoHS Directive (EU 2002/95/EC).
FC551601
Silicon N-channel MOS FET
For switching circuits
Overview
FC551601 is N-channel dual type small signal MOS FET employed small size
surface mounting package.
Package
Code
SMini5-F3-B
Name
Pin
1: Gate (FET1)
2: Source (FET1/2)
3: Gate (FET2)
Features
Low drain-source ON resistance: R
DS(on)
typ. = 6
W
(V
GS
= 4.0 V)
High-speed switching
Small size surface mounting package: SMini5-F3-B
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
4: Drain (FET2)
5: Drain (FET1)
Marking Symbol: V5
Internal Connection
(D1)
5
(D2)
4
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Drain-source surrender voltage
FET1
FET2
Gate-source surrender voltage
Drain current
Peak drain current
Total power dissipation
Overall
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
DP
P
T
T
ch
T
stg
Rating
60
±12
100
200
150
150
–55 to +150
Unit
V
V
mA
mA
mW
°C
°C
FET1
FET2
1
(G1)
2
(S)
3
(G2)
Publication date: January 2011
Ver. AED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
