Switching Diodes
MA4S159
Silicon epitaxial planar type
Unit : mm
For switching circuits
I
Features
•
Small S-mini type 4-pin package
•
Two isolated elements contained in one package, allowing high-
density mounting
•
Flat lead type, resulting in improved mounting efficiency and
solderability with the high-speed mounting machine
•
Short reverse recovery time t
rr
•
Small terminal capacitance, C
t
2.1
±
0.1
1.25
±
0.1
2.0
±
0.1
1.3
±
0.1
1
4
2
3
I
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Average forward
current
Peak forward
current
Non-repetitive peak
forward surge current
*
Junction temperature
Storage temperature
Note) * : t = 1 s
Single
Double
Single
Double
Single
Double
T
j
T
stg
I
FSM
I
FM
Symbol
V
R
V
RM
I
F(AV)
Rating
80
80
100
75
225
170
500
375
150
−55
to
+150
°C
°C
mA
mA
Unit
V
V
mA
0.7
±
0.1
1 : Anode 1
2 : Anode 2
3 : Cathode 2
4 : Cathode 1
S-Mini Type Package (4-pin)
Marking Symbol: M1B
Internal Connection
1
2
4
3
I
Electrical Characteristics
T
a
= 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time
*
Symbol
I
R
V
F
V
R
C
t
t
rr
V
R
= 75 V
I
F
= 100 mA
I
R
= 100
µA
V
R
= 0 V, f = 1 MHz
I
F
= 10 mA, V
R
= 6 V
I
rr
= 0.1 · I
R
, R
L
= 100
Ω
80
0.9
2
3
0.95
Conditions
Min
Typ
Max
0.1
1.2
Unit
µA
V
V
pF
ns
Note) 1. Rated input/output frequency: 100 MHz
2. * : t
rr
measuring circuit
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
0.1 · I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
0.3
±
0.05
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
