Schottky Barrier Diodes (SBD)
MA6Z718
(MA6S718)
Silicon epitaxial planar type
Unit: mm
For switching
6
2.0
±0.1
(0.65)(0.65)
5
4
0.7
±0.1
1.25
±0.1
2.1
±0.1
•
Three isolated elements are contained in one package, allowing
high-density mounting
•
Forward voltage V
F
, optimum for low voltage rectification
•
Optimum for high frequency rectification because of its short
reverse recovery time t
rr
1
2
3
0.2
±0.05
5˚
0.16
+0.10
–0.06
5˚
Parameter
Reverse voltage
Maximum peak reverse voltage
Peak forward current
*
Forward current
*
Junction temperature
Storage temperature
Note) *: Value for single diode
Symbol
V
R
V
RM
I
FM
I
F
T
j
T
stg
Rating
30
30
150
30
125
−55
to
+125
Unit
V
V
mA
mA
°C
°C
1: Anode 1
2: Anode 2
3: Anode 3
EIAJ: SC-88
4: Cathode 3
5: Cathode 2
6: Cathode 1
SMini6-F1 Package
Marking Symbol: M2N
Internal Connection
6
5
4
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Forward voltage
Symbol
V
F1
V
F2
Reverse current
Terminal capacitance
Reverse recovery time
*
Detection efficiency
I
R
C
t
t
rr
η
I
F
=
1 mA
I
F
=
30 mA
V
R
=
30 V
V
R
=
1 V, f
=
1 MHz
I
F
=
I
R
=
10 mA
I
rr
=
1 mA, R
L
=
100
Ω
V
IN
=
3 V
(peak)
, f
=
30 MHz
R
L
=
3.9 kΩ, C
L
=
10 pF
Conditions
Min
1
2
3
Typ
Max
0.4
1.0
1
Unit
V
µA
pF
ns
%
1.5
1.0
65
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
4. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
1 mA
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part number in the parenthesis shows conventional part number.
SKH00114BED
(0.15)
■
Absolute Maximum Ratings
T
a
=
25°C
0 to 0.1
(0.425)
■
Features
Publication date: April 2004
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
