Schottky Barrier Diodes (SBD)
MA3X727
(MA727)
Silicon epitaxial planar type
Unit: mm
For super high speed switching
For small current rectification
s
Features
•
V
R
=
50 V is guaranteed
•
I
F(AV)
=
200 mA rectification is possible
•
Mini type 3-pin package
1
2
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.40
+0.10
–0.05
3
0.16
+0.10
–0.06
1.50
+0.25
–0.05
2.8
+0.2
–0.3
s
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Repetitive peak reverse-voltage
Peak forward current
Average forward current
Non-repetitive peak forward-
surge-current
*
Junction temperature
Storage temperature
Symbol
V
R
V
RRM
I
FM
I
F(AV)
I
FSM
T
j
T
stg
Rating
50
50
300
200
1
150
−55
to
+150
Unit
V
V
mA
mA
A
°C
°C
10˚
1.1
+0.2
–0.1
(0.65)
0 to 0.1
1.1
+0.3
–0.1
1: Anode
2: N.C.
3: Cathode
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: M1Z
Internal Connection
3
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
1
2
s
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
I
R
V
F1
V
F2
Terminal capacitance
Reverse recovery time
*
Conditions
V
R
=
50 V
I
F
=
30 mA
I
F
=
200 mA
V
R
=
0 V, f
=
1 MHz
I
F
=
I
R
=
100 mA
I
rr
=
10 mA, R
L
=
100
Ω
Min
Typ
Max
200
0.36
0.55
Unit
µA
V
V
pF
ns
C
t
t
rr
30
3.0
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 1 GHz
Bias Application Unit N-50BU
t
r
10%
3. *: t
rr
measuring instrument
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
10 mA
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
Note) The part number in the parenthesis shows conventional part number.
0.4
±0.2
5˚
Publication date: January 2002
SKH00082BED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
