Schottky Barrier Diodes (SBD)
MA4X746
(MA746)
Silicon epitaxial planar type
For super high speed switching
For small current rectification
I
Features
•
Two isolated elements are contained in one package, allowing
high-density mounting
•
I
F(AV)
=
200 mA and V
R
<
50 V are achieved
•
Optimum for high frequency rectification because of its short
reverse recovery time (t
rr
)
•
Low forward voltage V
F
and good rectification efficiency
•
Mini type 4-pin package
2.90
+0.02
–0.05
1.9
±0.2
(0.95) (0.95)
3
4
1.50
+0.25
–0.05
2.8
+0.2
–0.3
Unit: mm
0.16
+0.1
–0.06
0.5R
2
(0.2)
0.60
+0.10
–0.05
10°
1
(0.65)
5°
+0.2
0 to 0.1
1.1
–0.1
Parameter
Reverse voltage (DC)
Repetitive peak reverse-voltage
Non-repetitive peak
Single
*1
Symbol
V
R
V
RRM
I
FSM
I
FM
*1
Rating
50
50
1
0.75
300
225
Unit
V
V
A
forward-surge-current
*2
Double
Peak forward
current
Average forward
current
Single
Double
Single
Marking Symbol: M3M
mA
Internal Connection
3
4
I
F(AV)
T
j
T
stg
200
150
150
−55
to
+150
mA
°C
°C
Double
*1
Junction temperature
Storage temperature
2
1
Note) *1: Value per chip
*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
I
R
V
F1
V
F2
Terminal capacitance
Reverse recovery time
*
C
t
t
rr
V
R
=
50 V
I
F
=
30 mA
I
F
=
200 mA
V
R
=
0 V, f
=
1 MHz
I
F
=
I
R
=
100 mA
I
rr
=
10 mA, R
L
=
100
Ω
30
3.0
Conditions
Min
Typ
Max
200
0.36
0.55
pF
ns
Unit
µA
V
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
Bias Application Unit N-50BU
t
r
10%
3. *: t
rr
measuring instrument
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
10 mA
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part number in the parenthesis shows conventional part number.
SKH00107AED
1.1
+0.3
–0.1
I
Absolute Maximum Ratings
T
a
=
25°C
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
EIAJ : SC-61
Mini4-G1 Package
0.4
±0.2
Publication date: August 2001
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
