Schottky Barrier Diodes (SBD)
MA3Z792
(MA792)
Silicon epitaxial planar type
Unit: mm
For super high speed switching
For small current rectification
3
0.3
+0.1
–0
0.15
+0.1
–0.05
•
High-density mounting is possible
•
I
F(AV)
=
100 mA rectification is possible
•
Optimum for high frequency rectification because of its short
reverse recovery time (t
rr
)
•
Low forward voltage V
F
and good rectification efficiency
•
S-Mini type 3-pin package
1
2
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
5°
0.9
±0.1
0 to 0.1
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Repetitive peak reverse-voltage
Peak forward current
Average forward current
Non-repetitive peak forward-
surge-current
*
Junction temperature
Storage temperature
Symbol
V
R
V
RRM
I
FM
I
F(AV)
I
FSM
T
j
T
stg
Rating
30
30
300
100
1
125
−55
to
+125
Unit
V
V
mA
mA
A
1 : Anode
2 : N.C.
3 : Cathode
SMini3-F1 Package
Marking Symbol: M3T
Internal Connection
3
°C
°C
1
2
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
*
Symbol
I
R
V
F
C
t
t
rr
V
R
=
30 V
I
F
=
100 mA
V
R
=
0 V, f
=
1 MHz
I
F
=
I
R
=
100 mA
I
rr
=
10 mA, R
L
=
100
Ω
20
2.0
Conditions
Min
Typ
Max
15
0.55
Unit
µA
V
pF
ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
Bias Application Unit N-50BU
t
r
10%
3. *: t
rr
measuring instrument
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
10 mA
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SKH00096AED
(0.15)
(0.425)
5°
I
Features
1.25
±0.1
2.1
±0.1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
