UNR221x Series
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
10
4
V
O
=
5 V
T
a
=
25°C
100
V
IN
I
O
V
O
=
0.2 V
T
a
=
25°C
5
Output current I
O
(µA)
4
3
10
2
Input voltage V
IN
(V)
10
3
10
1
2
10
0.1
1
0
0.1
1
10
100
1
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR221K
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
240
T
a
=
25°C
100
V
CE(sat)
I
C
I
C
/ I
B
=
10
h
FE
I
C
240
V
CE
=
10 V
10
160
I
B
= 1.2 mA
1.0 mA
0.8 mA
80
0.6 mA
0.4 mA
0.2 mA
0
0
2
4
6
8
10
12
Forward current transfer ratio h
FE
200
200
Collector current I
C
(mA)
160
T
a
=
75°C
120
25°C
80
−25°C
40
120
1
25°C
0.1
T
a
=
75°C
−25°C
40
0.01
1
10
100
1 000
0
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
V
IN
I
O
100
V
O
=
0.2 V
T
a
=
25°C
5
4
3
Input voltage V
IN
(V)
1
10
100
10
1
2
0.1
1
0
0.01
0.1
1
10
100
Collector-base voltage V
CB
(V)
Output current I
O
(mA)
12
SJH00010CED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
