Transistors with built-in Resistor
UNR221x Series
(UN221x Series)
Silicon NPN epitaxial planar transistor
Unit: mm
For digital circuits
■
Features
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
•
Mini type package allowing easy automatic insertion through tape
packing and magazine packing
1
0.40
+0.10
–0.05
3
1.50
+0.25
–0.05
2.8
+0.2
–0.3
0.16
+0.10
–0.06
2
(0.65)
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
■
Resistance by Part Number
•
UNR2210
•
UNR2211
•
UNR2212
•
UNR2213
•
UNR2214
•
UNR2215
•
UNR2216
•
UNR2217
•
UNR2218
•
UNR2219
•
UNR221D
•
UNR221E
•
UNR221F
•
UNR221K
•
UNR221L
•
UNR221M
•
UNR221N
•
UNR221T
•
UNR221V
•
UNR221Z
Marking Symbol (R
1
)
(UN2210)
8L
47 kΩ
(UN2211)
8A
10 kΩ
(UN2212)
8B
22 kΩ
(UN2213)
8C
47 kΩ
(UN2214)
8D
10 kΩ
(UN2215)
8E
10 kΩ
(UN2216)
8F
4.7 kΩ
(UN2217)
8H
22 kΩ
(UN2218)
8I
0.51 kΩ
(UN2219)
8K
1 kΩ
(UN221D)
8M
47 kΩ
(UN221E)
8N
47 kΩ
(UN221F)
8O
4.7 kΩ
(UN221K)
8P
10 kΩ
(UN221L)
8Q
4.7 kΩ
(UN221M) EL
2.2 kΩ
(UN221N)
EX
4.7 kΩ
(UN221T)
EZ
22 kΩ
(UN221V)
FD
2.2 kΩ
(UN221Z)
FF
4.7 kΩ
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
10˚
1.1
+0.2
–0.1
1.1
+0.3
–0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Internal Connection
R
1
B
R
2
E
C
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
200
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00010CED
0 to 0.1
0.4
±0.2
5˚
1