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UN5211 参数 Datasheet PDF下载

UN5211图片预览
型号: UN5211
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延平面晶体管 [Silicon NPN epitaxial planer transistor]
分类和应用: 晶体晶体管
文件页数/大小: 17 页 / 236 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
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UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Characteristics charts of UN521K
I
C
— V
CE
240
100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
I
C
/I
B
=10
h
FE
— I
C
240
V
CE
=10V
200
Forward current transfer ratio h
FE
200
Collector current I
C
(mA)
10
160
I
B
=1.2mA
1.0mA
0.8mA
80
0.6mA
0.4mA
0.2mA
0
0
2
4
6
8
10
12
160
Ta=75˚C
120
25˚C
80
–25˚C
40
120
1
25˚C
0.1
Ta=75˚C
40
–25˚C
0.01
1
3
10
30
100
300
1000
0
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
V
IN
— I
O
f=1MHz
I
E
=0
Ta=25˚C
100
30
V
O
=0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
4
Input voltage V
IN
(V)
1
3
10
30
100
10
3
1
0.3
0.1
0.03
3
2
1
0
0.01
0.1
0.3
1
3
10
30
100
Collector to base voltage
V
CB
(V)
Output current I
O
(mA)
Characteristics charts of UN521L
I
C
— V
CE
240
100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
I
C
/I
B
=10
240
h
FE
— I
C
V
CE
=10V
200
Forward current transfer ratio h
FE
200
Collector current I
C
(mA)
10
160
I
B
=1.0mA
120
0.8mA
0.6mA
80
0.4mA
160
Ta=75˚C
1
120
25˚C
Ta=75˚C
25˚C
0.1
–25˚C
–25˚C
80
40
0.2mA
0
0
2
4
6
8
10
12
40
0.01
1
3
10
30
100
300
1000
0
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
13