Composite Transistors
XN01211
(XN1211)
Silicon NPN epitaxial planer transistor
Unit: mm
For switching/digital circuits
2.90
+0.20
–0.05
1.9
±0.1
(0.95) (0.95)
3
4
5
1.50
+0.25
–0.05
2.8
+0.2
–0.3
0.16
+0.10
–0.06
s
Features
q
q
Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half.
2
0.30
+0.10
–0.05
1
(0.65)
1.1
+0.2
–0.1
q
UNR1211(UN1211)
×
2 elements
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Rating
Collector to emitter voltage
of
element Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
50
50
100
300
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini5-G1 Pakage
Marking Symbol:
9T
Internal Connection
5
4
3
2
Tr1
1
Tr2
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
Resistance ratio
*1
(Ta=25˚C)
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
h
FE
(small/large)
*1
V
CE(sat)
V
OH
V
OL
f
T
R
1
R
1
/R
2
Conditions
I
C
= 10µA, I
E
= 0
I
C
= 2mA, I
B
= 0
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 6V, I
C
= 0
V
CE
= 10V, I
C
= 5mA
V
CE
= 10V, I
C
= 5mA
I
C
= 10mA, I
B
= 0.3mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 2.5V, R
L
= 1kΩ
V
CB
= 10V, I
E
= –2mA, f = 200MHz
–30%
0.8
150
10
1.0
+30%
1.2
4.9
0.2
35
0.5
0.99
0.25
V
V
V
MHz
kΩ
min
50
50
0.1
0.5
0.5
typ
max
Unit
V
V
µA
µA
mA
Ratio between 2 elements
Note) The Part number in the Parenthesis shows conventional part number.
0 to 0.1
1.1
+0.3
–0.1
s
Basic Part Number of Element
10˚
0.4
±0.2
5˚
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
