Composite Transistors
P
T
— Ta
500
XN4401
I
C
— V
CE
–60
Ta=25˚C
I
B
=–300µA
–60
V
CE
=–5V
Ta=25˚C
–50
I
C
— I
B
Total power dissipation P
T
(mW)
Collector current I
C
(mA)
–250µA
–40
–200µA
–30
Collector current I
C
(mA)
400
–50
–40
300
–150µA
–30
200
–20
–100µA
–20
100
–10
–50µA
–10
0
0
40
80
120
160
0
0
–2 –4 –6 –8 –10 –12 –14 –16 –18
0
0
–100
–200
–300
–400
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base current I
B
(
µA
)
I
B
— V
BE
–400
–350
V
CE
= – 5V
Ta=25˚C
–200
–240
I
C
— V
BE
–10
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
V
CE
=–5V
I
C
/I
B
=10
25˚C
Ta=75˚C
–25˚C
–3
–1
–0.3
–0.1
–0.03
–0.01
25˚C
Ta=75˚C
Base current I
B
(
µA
)
–300
–250
–200
–150
–100
–50
0
0
–0.4
–0.8
–1.2
–1.6
Collector current I
C
(mA)
–160
–25˚C
–120
–80
–40
–0.003
–0.001
–1
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
–3
–10
–30
–100 –300 –1000
Base to emitter voltage V
BE
(V)
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA)
h
FE
— I
C
600
V
CE
= –10V
160
V
CB
=–10V
Ta=25˚C
f
T
— I
E
8
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
f=1MHz
I
E
=0
Ta=25˚C
Forward current transfer ratio h
FE
500
Transition frequency f
T
(MHz)
140
120
100
80
60
40
20
7
6
5
4
3
2
1
0
–1
400
Ta=75˚C
300
25˚C
–25˚C
200
100
0
–1
–3
–10
–30
–100 –300 –1000
0
0.1
0.3
1
3
10
30
100
–2 –3 –5
–10
–20 –30 –50 –100
Collector current I
C
(mA)
Emitter current I
E
(mA)
Collector to base voltage V
CB
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
