Composite Transistors
XN04504
(XN4504)
Silicon NPN epitaxial planar type
For amplification of low-frequency output
4
2.90
+0.20
–0.05
1.9
±0.1
(0.95) (0.95)
5
6
Unit: mm
0.16
+0.10
–0.06
1.50
+0.25
–0.05
0.30
+0.10
–0.05
0.50
+0.10
–0.05
10˚
■
Basic Part Number
•
2SD1328
×
2
1.1
+0.2
–0.1
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
25
20
12
0.5
1
300
150
−55
to
+150
V
V
V
A
A
mW
°C
°C
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ : SC-74
0 to 0.1
Parameter
Symbol
Rating
Unit
Marking Symbol: 5X
Internal Connection
4
5
6
Tr2
1.1
+0.3
–0.1
■
Absolute Maximum Ratings
T
a
=
25°C
(0.65)
•
Two elements incorporated into one package
•
Reduction of the mounting area and assembly cost by one half
3
2
1
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
Tr1
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
*1
3
Conditions
Min
25
20
12
2
Typ
1
Max
Unit
V
V
V
100
nA
V
V
MHz
pF
Ω
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on
I
C
=
10
µA,
I
E
=
0
I
C
= 1
mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
V
CB
=
25 V, I
E
=
0
V
CE
=
2 V, I
C
=
0.5 A
V
CE
=
2 V, I
C
=
1 A
I
C
=
0.5 A, I
B
= 20
mA
I
C
=
0.5 A, I
B
= 50
mA
V
CB
=
10 V, I
E
= −50
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
200
60
0.13
800
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
*1
0.40
1.2
200
10
1.0
Collector output capacitance
(Common base, input open circuited)
ON resistance
*2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
1 kΩ
*2: R
on
test circuit
I
B
=
1 mA
V
B
V
V
V
B
×
1 000
(Ω)
V
A
−
V
B
f
=
1 kHz
V
=
0.3 V
V
A
R
on
=
Note) The part number in the parenthesis shows conventional part number.
SJJ00078BED
0.4
±0.2
■
Features
2.8
+0.2
–0.3
5˚
Publication date: February 2004
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
