This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC3938G
Silicon NPN epitaxial planar type
For high-speed switching
■
Features
■
Package
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CES
I
C
V
EBO
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
T
stg
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
I
CBO
I
EBO
h
FE
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Turn-off time
Storage time
t
off
t
stg
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
60 to 120
R
90 to 200
Publication date: April 2007
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Rating
40
40
5
Unit
V
V
V
100
300
mA
mA
°C
150
150
mW
°C
−55
to
+150
Conditions
Min
Typ
Max
0.1
Unit
µA
V
V
µA
V
CB
=
40 V, I
E
=
0
V
EB
=
4 V, I
C
=
0
0.1
V
CE
=
1 V, I
C
=
10 mA
I
C
=
10 mA, I
B
=
1 mA
I
C
=
10 mA, I
B
=
1 mA
60
200
0.17
0.25
1
V
CB
=
10 V, I
E
= −10
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
450
2
MHz
pF
ns
6
Refer to the measurement circuit
17
17
10
ns
ns
SJC00364AED
M
ain
te
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M
Di ain
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on na
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ue e/
d
•
Low collector-emitter saturation voltage V
CE(sat)
•
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
•
Code
SMini3-F2
•
Marking Symbol: 2Y
•
Pin Name
1. Base
2. Emitter
3. Collector
Di
sc
on
tin
ue
1
PANASONICBATTERY [ Panasonic Battery Group ]
