This product complies with the RoHS Directive (EU 2002/95/EC).
Power MOSFETs
2SK3892
Silicon N-channel power MOSFET
For contactless relay, diving circuit for a solenoid,
driving circuit for a motor, control equipment and
switching power supply
Features
Gate-source surrender voltage V
GSS
:
±
30 guaranteed
Avalanche energy capacity guaranteed: EAS > 986 mJ
High-speed switching: t
f
= 39 ns
Package
Code
TO-220D-A1
Name
Pin
1: Gate
2: Drain
3: Source
Parameter
Symbol
V
DSS
V
GSS
I
D
I
DP
Rating
200
22
88
40
±30
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability
*
Drain power dissipation
Junction temperature
Storage temperature
EAS
P
D
T
j
986
2.0
T
a
= 25°C
150
T
stg
–55 to +150
Note) *: L = 2.67 mH, I
L
= 22 A, V
DD
= 50 V, 1 pulse
Short-circuit input capacitance
(Common source)
Short-circuit output capacitance
(Common source)
Reverse transfer capacitance
(Common source)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Pl
ea
Forward transfer admittance
Ma
Drain-source ON resistance
int
Gate threshold voltage
en
an
Gate-source cutoff current
ce
Drain-source cutoff current
/D
isc
Drain-source surrender voltage
on
Parameter
Symbol
V
DSS
I
DSS
I
GSS
V
th
R
DS(on)
Y
fs
tin
pla
Electrical Characteristics
T
C
= 25°C±3°C
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Unit
V
V
M
ain
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Absolute Maximum Ratings
T
C
= 25°C
A
A
mJ
W
W
°C
°C
Marking Symbol: K3892
Internal Connection
D
G
S
ue
di
nc
Conditions
Min
200
Typ
Max
10
Unit
V
mA
mA
V
mW
S
pF
pF
pF
ns
ns
ns
ns
I
D
= 1 mA, V
GS
= 0
V
DS
= 160 V, V
GS
= 0
V
GS
=
±30
V, V
DS
= 0
±1.0
4.5
62
V
DS
= 10 V, I
D
= 1.0 mA
V
GS
= 10 V, I
D
= 11.0 A
V
DS
= 10 V, I
D
= 11.0 A
2.5
7
48
15
3 177
456
41
54
V
DS
= 25 V, V
GS
= 0, f = 1 MHz
V
DD
= 100 V, I
D
= 11.0 A
R
L
= 9.1
W,
V
GS
= 10 V
60
194
39
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2009
SJG00043BED
1
PANASONICBATTERY [ Panasonic Battery Group ]
