Doc No.
TT4-EA-12791
Revision.
2
Product Standards
Schottky Barrier Diode
DB2130200L
DB2130200L
Silicon epitaxial planar type
Unit: mm
For rectification
Features
Low forward voltage VF
Forward current (Average) IF(AV) = 1 A rectification is possible
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1.25
0.6
2
0.12
Marking Symbol: B3
0.8
1
1.9
2.5
0.55
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Cathode
2. Anode
Panasonic
JEITA
Code
SMini2-F4-B-B
SC-108A
―
Absolute Maximum Ratings Ta = 25
C
Parameter
Symbol
Reverse voltage
Maximum peak reverse voltage
Forward current (Average)
*1
Non-repetitive peak forward surge current
Junction temperature
Operating ambient temperature
Storage temperature
Note:
Rating
30
30
1
20
125
-40 to +85
-55 to +125
Unit
V
V
A
A
°C
°C
°C
*2
VR
VRM
IF(AV)
IFSM
Tj
Topr
Tstg
Internal Connection
2
*1 For embedded alumina substrate (substrate size:5 cm × 5 cm)
*2 50 Hz sine wave 1 cycle (Non-repetitive peak current)
1
Page 1 of 4
Established : 2010-12-03
Revised
: 2013-04-19