DB3X207K
Silicon epitaxial planar type
For high frequency amplification
Features
Low forward voltage V
F
Forward current (Average) I
F(AV)
= 1 A rectification is possible
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: 3F
Packaging
DB3X207K0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
*1
Non-repetitive peak forward surge current
*2
Junction temperature
Storage temperature
Symbol
V
R
V
RRM
I
F(AV)
I
FSM
T
j
T
stg
Rating
20
20
1
3
125
–55 to +125
Unit
V
V
A
A
°C
°C
1: Anode
2: N.C.
3: Cathode
Panasonic
JEITA
Code
Mini3-G3-B
SC-59A
TO-236AA/SOT-23
3
Note) *1: Mounted on an alumina PC board
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
1
2
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*1
Symbol
V
F
I
R
C
t
t
rr
I
F
= 1.0 A
V
R
= 6 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
= 100 mA, I
rr
= 10 mA, R
L
= 100
Ω
43
12
Conditions
Min
Typ
Max
0.4
1.5
Unit
V
mA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz
*1: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
= 10 mA
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
Ω
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
Ω
Pulse Generator
(PG-10N)
R
s
= 50
Ω
Publication date: January 2013
Ver. BED
1
PANASONICBATTERY [ Panasonic Battery Group ]
