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DMC564030R 参数 Datasheet PDF下载

DMC564030R图片预览
型号: DMC564030R
PDF下载: 下载PDF文件 查看货源
内容描述: DMC56403 NPN硅外延平面型 [DMC56403 Silicon NPN epitaxial planar type]
分类和应用: 晶体晶体管开关光电二极管
文件页数/大小: 4 页 / 346 K
品牌: PANASONICBATTERY [ Panasonic Battery Group ]
 浏览型号DMC564030R的Datasheet PDF文件第2页浏览型号DMC564030R的Datasheet PDF文件第3页浏览型号DMC564030R的Datasheet PDF文件第4页  
DMC56403
Silicon NPN epitaxial planar type
For digital circuits
DMC26403 in SMini6 type package
Features
Low collector-emitter saturation voltage V
CE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: H1
Basic Part Number
Dual DRC2144E (Individual)
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
Panasonic
JEITA
Code
(C1)
6
Tr1
Packaging
DMC564030R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Tr1
Tr2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
150
150
–55 to +150
Unit
V
V
mA
mW
°C
°C
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SMini6-F3-B
SC-113DB
SOT-363
(B2)
5
R
1
R
2
R
2
Tr2
(E2)
4
R
1
1
(E1)
2
(B1)
3
(C2)
Resistance value
R
1
R
2
Typ
Max
47
47
Unit
V
V
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistance
Resistance ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
IN(on)
V
IN(off)
R
1
R
1
/ R
2
Conditions
I
C
= 10 µA, I
E
= 0
I
C
= 2 mA, I
B
= 0
V
CB
= 50 V, I
E
= 0
V
CE
= 50 V, I
B
= 0
V
EB
= 6 V, I
C
= 0
V
CE
= 10 V, I
C
= 5 mA
I
C
= 10 mA, I
B
= 0.5 mA
V
CE
= 0.2 V, I
C
= 5 mA
V
CE
= 5 V, I
C
= 100 µA
–30%
0.8
47
1.0
3.6
0.8
+30%
1.2
80
0.25
Min
50
50
0.1
0.5
0.1
µA
µA
mA
V
V
V
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2013
Ver. EED
1