DRA5114E0L 参数 Datasheet PDF下载

DRA5114E

Silicon PNP epitaxial planar type

For digital circuits

Complementary to DRC5114E

DRA2114E in SMini3 type package



Features



Low collector-emitter saturation voltage V

CE(sat)



Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)

Unit: mm



Marking Symbol: LB



Packaging

DRA5114E0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)

1: Base

2: Emitter

3: Collector

Panasonic

JEITA

Code

R

1

R

2



Absolute Maximum Ratings

T

a

= 25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector current

Total power dissipation

Junction temperature

Storage temperature

Symbol

V

CBO

V

CEO

I

C

P

T

T

j

T

stg

Rating

–50

–50

–100

150

150

–55 to +150

Unit

V

V

mA

mW

°C

°C

SMini3-F2-B

SC-85



C

B

E

Resistance value

R

1

R

2

Typ

10

10

Max

kΩ

kΩ

Unit

V

V



Electrical Characteristics

T

a

= 25°C±3°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

Input voltage (ON)

Input voltage (OFF)

Input resistance

Resistance ratio

Symbol

V

CBO

V

CEO

I

CBO

I

CEO

I

EBO

h

FE

V

CE(sat)

V

I(on)

V

I(off)

R

1

R

1

/ R

2

Conditions

I

C

= –10 µA, I

E

= 0

I

C

= –2 mA, I

B

= 0

V

CB

= –50 V, I

E

= 0

V

CE

= –50 V, I

B

= 0

V

EB

= –6 V, I

C

= 0

V

CE

= –10 V, I

C

= –5 mA

I

C

= –10 mA, I

B

= – 0.5 mA

V

CE

= – 0.2 V, I

C

= –5 mA

V

CE

= –5 V, I

C

= –100 µA

–30%

0.8

10

1.0

–2.1

– 0.8

+30%

1.2

35

– 0.25

Min

–50

–50

– 0.1

– 0.5

– 0.5

µA

µA

mA



V

V

V

kΩ



Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: November 2012

Ver. DED

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