DSC900100L 参数 Datasheet PDF下载

This product complies with the RoHS Directive (EU 2002/95/EC).

DSC9001

Silicon NPN epitaxial planar type

For general amplification

Complementary to DSA9001

DSC5001 in SSMini3 type package



Features



Low collector-emitter saturation voltage V

CE(sat)



Contributes to miniaturization of sets, reduction of component count.



High forward current transfer ratio h

FE

with excellent linearity



Eco-friendly Halogen-free package



Package



Code

SSMini3-F3-B



Name

Pin

1. Base

2. Emitter

3. Collector



Packaging

Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)



Absolute Maximum Ratings

T

a

= 25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

T

j

T

stg

Rating

60

50

7

100

200

125

150

–55 to +150

Unit

V

V

V

mA

mA

mW

°C

°C



Marking Symbol: C1



Electrical Characteristics

T

a

= 25°C±3°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

*

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

(Common base, input open circuited)

Symbol

V

CBO

V

CEO

V

EBO

I

CBO

I

CEO

h

FE

V

CE(sat)

f

T

C

ob

Conditions

I

C

= 10

mA,

I

E

= 0

I

C

= 2 mA, I

B

= 0

I

E

= 10

mA,

I

C

= 0

V

CB

= 20 V, I

E

= 0

V

CE

= 10 V, I

B

= 0

V

CE

= 10 V, I

C

= 2 mA

I

C

= 100 mA, I

B

= 10 mA

V

CE

= 10 V, I

C

= 2 mA

V

CB

= 10 V, I

E

= 0, f = 1 MHz

210

0.13

150

1.5

Min

60

50

7

0.1

100

460

0.3

Typ

Max

Unit

V

V

V

mA

mA



V

MHz

pF

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Code

Rank

h

FE

Marking Symbol

R

R

210 to 340

C1R

S

S

290 to 460

C1S

0

No-rank

210 to 460

C1

Product of no-rank is not classified and have no marking symbol for rank.

Publication date: January 2011

Ver. CED

1