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ERJ3EKF1001V 参数 Datasheet PDF下载

ERJ3EKF1001V图片预览
型号: ERJ3EKF1001V
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DC-DC降压稳压器,包括控制器IC和功率MOSFET [Synchronous DC-DC Step down Regulator comprising of Controller IC and Power MOSFET]
分类和应用: 稳压器控制器
文件页数/大小: 28 页 / 1272 K
品牌: PANASONICBATTERY [ Panasonic Battery Group ]
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NN30312A
VIN = 4.5 V to 30 V, 10 A
Synchronous DC-DC Step down Regulator
comprising of Controller IC and Power MOSFET
FEATURES
High-Speed Response DC-DC Step Down Regulator
Circuit that employs Hysteretic Control System
Two 11 mΩ (Typ.)
MOSFETs for High Efficiency at 10 A
SKIP (discontinuous) Mode for Light Load Efficiency
Up to 10 A Output Current
Input VoltageRange : AVIN : 4.5 V to 30 V,
PVIN : 4.5 V to 30 V,
Output Voltage Range : 0.75 V to 5.5 V
Selectable Switching Frequency 250 kHz , 750 kHz ,
1250 kHz
Adjustable Soft Start
Low Operating and Standby Quiescent Current
Open Drain Power Good Indication for Output Over ,
Under Voltage
Built-in Under Voltage Lockout (UVLO),
Thermal Shut Down (TSD),
Over Voltage Detection (OVD),
Under Voltage Detection (UVD),
Over Current Protection (OCP),
Short Circuit Protection (SCP)
HQFN040-A3-0606B ( Size : 6 mm X 6 mm, 0.5 mm
pitch ), 40pin Plastic Quad Flat Non-leaded Package
Heat Slug Down (QFN Type)
DESCRIPTION
NN30312A is a synchronous DC-DC Step down
Regulator (1-ch) comprising of a Controller IC and two
power MOSFETs and employs the hysteretic control
system.
By this system, when load current changes suddenly, it
responds at high speed and minimizes the changes of
output voltage.
Since it is possible to use capacitors with small
capacitance and it is unnecessary to add external parts
for system phase compensation, this IC realizes
downsizing of set and reducing in the number of external
parts. Output voltage is adjustable by user.
Maximum current is 10 A.
APPLICATIONS
High Current Distributed Power Systems such as
・HDDs
(Hard Disk Drives)
・SSDs
(Solid State Drives)
・PCs
・Game
consoles
・Servers
・Security
Cameras
・Network
TVs
・Home
Appliances
・OA
Equipment etc.
SIMPLIFIED APPLICATION
VREG
EFFICIENCY CURVE
Frequency = 250 kHz
100
90
PVIN
0.1μF
22μF
PVIN
EN
PGOOD
100k
80
70
Efficiency (%)
60
50
40
30
20
10
0
0.001
0.010
0.100
1.000
10.000
FCCM/ Vo= 1.05V
FCCM/ Vo= 1.2V
FCCM/ Vo= 1.8V
FCCM/ Vo= 3.3V
FCCM/ Vo= 5.0V
SKIP/ Vo= 1.05V
SKIP/ Vo= 1.2V
SKIP/ Vo= 1.8V
SKIP/ Vo= 3.3V
SKIP/ Vo= 5.0V
VOUT
BST
AVIN
AVIN
0.1μF
22μF
NN30312A
LX
0.1μF
4.7μH
DCDCOUT
1.05 V
22μF x 3
1.5k
1k
VFB
VREG
1μF
SS
AGND PGND
10nF
Notes)
This application circuit is an example. The operation
of mass production set is not guaranteed. You should
perform enough evaluation and verification on the
design of mass production set. You are fully
responsible for the incorporation of the above
application circuit and information in the design of
your equipment.
Publication date: October 2012
IOUT (A)
Condition )
V
IN
= 12 V, Vout = 1.05 V , 1.2 V , 1.8V , 3.3V , 5.0 V,
L = 4.7 µH, Cout = 66 µF ( 22 µF x 3 ), Frequency = 250 kHz
1
Ver. CEB