PJD06N03
25V N-Channel Enhancement Mode MOSFET
TO-252
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@30A=6mΩ
• R
DS(ON)
, V
GS
@4.5V,I
DS
@30A=9mΩ
• Advanced trench process technology
• High Density Cell Design For Uitra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICALDATA
• Case: TO-252 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 06N03
Drain
Gate
Source
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E TE R
D r a i n- S o ur c e Vo l t a g e
G a t e - S o ur c e Vo l t a g e
C o nt i nuo us D r a i n C ur r e nt
P ul s e d D r a i n C ur r e nt
1)
S ym b o l
V
D S
V
GS
I
D
I
D M
T
A
= 2 5
O
C
T
A
= 7 5
O
C
P
D
T
J
, T
S T G
E
AS
R
θ
J C
R
θ
J A
Li mi t
25
+20
60
280
6 2 .5
3 7 .5
-5 5 to + 1 5 0
180
2 .0
50
U ni t s
V
V
A
A
W
O
M a xi m um P o w e r D i s s i p a t i o n
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
Avalanche Energy with Single Pulse
ID=27A, VDD=25V, L=0.5mH
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance(PCB mounted)
2
C
mJ
O
C /W
C /W
O
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUL.19.2006
PAGE . 1
PANJIT [ PAN JIT INTERNATIONAL INC. ]
