Transys
Electronics
L I M I T E D
TO-92 Plastic-Encapsulated Transistors
2N4403
TRANSISTOR (PNP)
TO—92
FEATURES
Power dissipation
P
CM
: 0.625 W (Tamb=25℃)
Collector current
A
I
CM
: -0.6
Collector-base voltage
V
V
(BR)CBO
: -40
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
1.EMILTTER
2.BASE
3. COLLECTOR
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
unless otherwise specified)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
V
CE(sat)
V
BE(sat)
Test
conditions
MIN
-40
-40
-5
-0.1
-0.1
-0.1
100
300
-0.4
-0.95
V
V
MAX
UNIT
V
V
V
µA
µA
µA
Ic=-100µA , I
E
=0
I
C
= -1mA , I
B
=0
I
E
=-100µA, I
C
=0
V
CB
=-35 V, I
E
=0
V
CE
=-35 V, I
B
=0
V
EB
=-4V, I
C
=0
V
CE
=-2 V, I
C
=- 150mA
I
C
=-150 mA, I
B
=-15mA
I
C
= -150 mA, I
B
=-15mA
V
CE
= -10V, I
C
= -20mA
Transition frequency
f
T
f =
100MHz
200
MHz
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