2N7002DW — N-Channel Enhancement Mode Field Effect Transistor
October 2007
2N7002DW
N-Channel Enhancement Mode Field Effect Transistor
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant
SC70-6
(SOT363)
1
Marking : 2N
1
Absolute Maximum Ratings *
Symbol
V
DSS
V
DGR
V
GSS
I
D
Drain-Source Voltage
T
a
= 25°C unless otherwise noted
Parameter
Drain-Gate Voltage R
GS
≤
1.0MΩ
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Continuous
Continuous @ 100°C
Pulsed
Value
60
60
±20
±40
115
73
800
-55 to +150
Units
V
V
V
mA
°C
T
J ,
T
STG
Junction and Storage Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Parameter
Total Device Dissipation
Derating above T
A
= 25°C
Thermal Resistance, Junction to Ambient *
Value
200
1.6
625
Units
mW
mW/°C
°C/W
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, Minimun land pad size,
© 2007 Fairchild Semiconductor Corporation
2N7002DW Rev. A
1
www.fairchildsemi.com
PANJIT [ PAN JIT INTERNATIONAL INC. ]
