BC817 SERIES
ELECTRICAL CHARACTERISTICS(T
J
=25
o
C,unless otherwise notes)
PARAMETER
Collector-Emitter Breakdown Voltage (Ic=10mA, IB=0)
Collector-Base Breakdown Voltage (V
EB
=0V, Ic=10μA
Emitter-Base Breakdown Voltage (I
E
=1μA,Ic=0)
Emitter-Base Cutoff Current (V
EB
=5V)
Collector-Base Cutoff Current (V
CB
=20V,I
E
=0)
T
J
=150
o
C
DC Current Gain
(Ic=100mA,V
CE
=1V)
(Ic=500mA,V
CE
=1V)
Collector-Emitter Saturation Voltage (Ic=500mA ,I
B
=50mA)
Base-Emitte Voltage (Ic=500mA,V
CE
=1.0V)
Collector-Base Capacitance (V
CB
=10V,I
E
=0,f=1MHz)
Current Gain-Bandwidth Product (Ic=10mA,V
CE
=5V,f=100MHz)
V
CE(SAT)
V
BE(ON)
C
CBO
f
T
BC817-16
BC817-25
BC817-40
SYMBOL
V
(BR)
CEO
V
(BR)
CBO
V
(BR)
EBO
I
EBO
I
CBO
MIN.
45
50
5.0
-
-
-
100
160
250
40
TYP.
-
-
-
-
MAX.
-
-
-
100
100
-
5.0
-
-
-
-
UNIT
V
V
V
nA
nA
μA
h
FE
250
400
600
-
-
-
-
-
100
-
-
7.0
-
0.7
1.2
-
-
V
V
pF
MHz
ELECTRICAL CHARACTERISTICS CURVES
450
400
250
200
300
350
300
hFE
150
100
50
0
0.01
0.1
1
10
100
1000
hFE
V
CE
= 1V
250
200
150
100
50
0
0.01
0.1
1
V
CE
= 1V
10
100
1000
Colle ctor Cur r e nt
,
I
C
(
m A
)
Colle ctor Cur r e nt
,
I
C
(
m A
)
Fig
. 1.
BC
817-16
Typical h
FE
vs
.
I
C
100
Fig
. 2.
BC
817-25
Typical h
FE
vs
.
I
C
700
600
500
Capacitance
,
C
J
(
p F)
C
IB
(EB)
hFE
400
300
200
100
0
0.01
V
CE
= 1V
0.1
1
10
100
1000
10
C
OB
(EB)
1
0.1
1
10
100
Reverse Voltage
,
V
(
V
)
R
Colle ctor Curre nt
,
I
C
(
m A
)
Fig
. 3
January 05,2011-REV.01
BC
817-40
Typical h
FE
vs
.
I
C
Fig
. 4
Typical Capacitances
PAGE . 2
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