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MBR1060 参数 Datasheet PDF下载

MBR1060图片预览
型号: MBR1060
PDF下载: 下载PDF文件 查看货源
内容描述: 10安培肖特基二极管 [10 AMPERES SCHOTTKY BARRIER RECTIFIERS]
分类和应用: 肖特基二极管
文件页数/大小: 2 页 / 426 K
品牌: PANJIT [ PAN JIT INTERNATIONAL INC. ]
 浏览型号MBR1060的Datasheet PDF文件第2页  
MBR1020~MBR10100
10 AMPERES SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvlotage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
environment substance directive request
.038(0.96)
.019(0.50)
20 to 100 Volts
CURRENT
10 Amperes
TO-220AC
Unit : inch (mm)
.419(10.66)
.387(9.85)
.139(3.55)
MIN
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.269(6.85)
.226(5.75)
.624(15.87)
.50(12.7)MIN
• Pb free product are available : 99% Sn above can meet Rohs
.177(4.5)MAX
.548(13.93)
.025(0.65)MAX
MECHANICALDATA
Case: TO-220AC molded plastic
Terminals: solder plated, solderable per MIL-STD-750, Method 2026
Polarity: As marked.
Mounting Position: Any
Weight: 0.08 ounces, 2.24 grams.
.1(2.54)
.1(2.54)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt ( S e e f i g . 1 )
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne -
w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 1 0 A , p e r l e g
M a x i m u m D C R e v e r s e C u r r e n t
Tc
= 2 5
O
C
a t R a t e d D C B l o c k i ng V o l t a g e T
c
= 1 2 5
O
C
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g J u n c t i o n Te m p e r a t u r e R a n g e
S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
V
RRM
V
RMS
V
DC
I
AV
I
FSM
V
F
MB R1 0 2 0
20
14
20
MB R1 0 3 0
30
21
30
MB R1 0 4 0
40
28
40
MB R1 0 4 5
45
3 1 .5
45
10
150
MB R1 0 5 0
50
35
50
MB R1 0 6 0
60
42
60
MB R1 0 8 0
80
56
80
MB R1 0 1 0 0
100
70
100
U N IT S
V
V
V
A
A
0 .6 5
0 .1
15
2
- 5 0 TO + 1 5 0
- 5 0 TO + 1 7 5
0 .8
V
I
R
mA
RθJ C
T
J
T
STG
O
C/W
O
C
C
O
Notes :
Both Bonding and Chip structure are available.
REV.0-MAR.30.2005
PAGE . 1