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MBR10100CT 参数 Datasheet PDF下载

MBR10100CT图片预览
型号: MBR10100CT
PDF下载: 下载PDF文件 查看货源
内容描述: 10安培肖特基二极管 [10 AMPERES SCHOTTKY BARRIER RECTIFIERS]
分类和应用: 肖特基二极管瞄准线功效
文件页数/大小: 2 页 / 85 K
品牌: PANJIT [ PAN JIT INTERNATIONAL INC. ]
 浏览型号MBR10100CT的Datasheet PDF文件第2页  
MBR1040CT~MBR10200CT
10 AMPERES SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvlotage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
.058(1.47)
.042(1.07)
40 to 200 Volts
CURRENT
10 Amperes
MECHANICALDATA
• Case: TO-220AB molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.0655 ounces, 1.859 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt ( S e e
fi g .1 )
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e
ha l f s i ne - w a ve s up e r i m p o s e d o n r a t e d
l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 5 A , p e r l e g
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng V o l t a g e T
J
= 1 2 5
O
C
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i ng a nd S t o r a g e J unc t i o n
Te m p e r a t u r e R a n g e
S YM B O L
V
RRM
V
RMS
V
DC
I
F (AV )
MB R1 0 4 0 C T MB R1 0 4 5 C T MB R1 0 5 0 C T MB R1 0 6 0 C T MB R1 0 8 0 C T MB R1 0 9 0 C T MB R1 0 1 0 0 C T MB R1 0 1 5 0 C T MB R1 0 2 0 0 C T
U N IT S
V
V
V
A
40
28
40
45
3 1 .5
45
50
35
50
60
42
60
80
56
80
10
90
63
90
100
70
100
150
105
150
200
140
200
I
F S M
150
A
V
F
0 .7
0 .7 5
0 .0 5
20
2
0 .8
0.9
V
I
R
mA
O
R
θ
J C
T
J
, T
S TG
-5 5 to + 1 5 0
C /
W
C
-6 5 to + 1 7 5
O
Notes :
Both Bonding and Chip structure are available.
STAD-APR.30.2009
PAGE . 1