MMBTA42
NPN HIGH VOLTAGE TRANSISTOR
VOLTAGE
FEATURES
• NPN silicon, planar design
• Collector-emitter voltage V
CE
= 300V
• Collector current I
C
= 500mA
• In compliance with EU RoHS 2002/95/EC directives
300 Volts
POWER
225 mWatts
MECHANICAL DATA
• Case: SOT-23, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.008 gram
• Marking: A42
ABSOLUTE MAXIMUM RATINGS
PA RA M E TE R
C o lle c to r - E mi tte r Vo lta g e
C o lle c to r - B a s e Vo lta g e
E mi tte r - B a s e Vo lta g e
C o l l e c t o r C ur r e nt C o nt i nuo us
S ym b o l
V
CEO
V
CBO
V
EBO
I
Va l ue
300
300
6 .0
500
U ni t s
V
V
V
mA
C
THERMAL CHARACTERISTICS
PA RA M E TE R
Ma x P o we r D i s s i p a ti o n (No te 1 )
The r m a l R e s i s t a nc e , J unc t i o n t o A m b i e nt
J u n c t i o n Te m p e r a t u r e
S t o r a g e Te m p e r a t u r e
S ym b o l
P
TOT
R
θ
J A
T
J
T
S TG
Va l ue
225
556
-5 5 to 1 5 0
-5 5 to 1 5 0
U ni t s
mW
O
C /W
O
C
C
O
Top View
3
Collector
1
BASE
3
COLLECTOR
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
1
Base
2
Emitter
2
EMITTER
STAD-MAR.24.2008
PAGE . 1
PANJIT [ PAN JIT INTERNATIONAL INC. ]
