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UF1004FCT 参数 Datasheet PDF下载

UF1004FCT图片预览
型号: UF1004FCT
PDF下载: 下载PDF文件 查看货源
内容描述: 超快恢复二极管 [ULTRAFAST RECOVERY RECTIFIERS]
分类和应用: 二极管快恢复二极管超快恢复二极管瞄准线功效局域网快速恢复二极管
文件页数/大小: 2 页 / 92 K
品牌: PANJIT [ PAN JIT INTERNATIONAL INC. ]
 浏览型号UF1004FCT的Datasheet PDF文件第2页  
UF1000FCT~UF1006FCT
ULTRAFAST RECOVERY RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of
MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Ultra fast recovery time, high voltage.
• In compliance with EU RoHS 2002/95/EC directives
50 to 600 Volts
CURRENT
10.0 Amperes
MECHANCALDATA
• Case: ITO-220AB full molded plastic package
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt a t T
C
= 1 0 0
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne -
w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 5 . 0 A
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng V o l t a g e T
J
= 1 2 5
O
C
Ty p i c a l J u n c t i o n C a p a c i t a n c e ( N o t e 1 )
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 2 )
Ty p i c a l T h e r m a l R e s i s t a n c e ( N o t e 3 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
U F 1 0 0 0 F C T U F 1 0 0 1 F C T U F 1 0 0 2 F C T U F 1 0 0 3 F C T U F 1 0 0 4 F C T U F 1 0 0 6 F C T
U N I T S
V
RRM
V
RMS
V
D C
I
F ( A V )
I
F S M
V
F
I
R
C
J
t
rr
R
θ
J C
T
J
, T
S T G
60
50
2
-5 5 to +1 5 0
1 .0
1 .0
500
40
100
O
50
35
50
100
70
100
200
140
200
10
125
300
210
300
400
280
400
600
420
600
V
V
V
A
A
1 .3 0
1 .7 0
V
µA
pF
ns
C / W
O
C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A.
3. Thermal resistance from Junction to case.
4. Both Bonding and Chip structure are available.
STAD-MAR.05.2009
PAGE . 1