PD25025F
25 W, 2.3GHz - 2.5GHz , N-Channel E-Mode, Lateral MOSFET
Introduction
The PD25025F is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for
2.3GHz - 2.5GHz Class AB wireless base station
amplifier applications.
This device is manufactured on an advanced LDMOS
technology, offering state-of-the-art performance,
reliability, and thermal resistance. Packaged in an
industry-standard CuW package capable of deliver
ing a minimum output power of 25 W, it is ideally
suited for today's RF power amplifier applications.
-
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case:
Sym
R
JC
Value
2.1
Unit
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Drain Current—Continuous
Derate Above 25
°C:
Operating Junction Tempera-
ture
Storage Temperature Range
Sym Value
V
DSS
65
V
GS
–0.5, +15
I
D
4.25
120.7
—
T
J
0.69
200
Unit
Vdc
Vdc
Adc
W
W/°C
°C
Total Dissipation at T
C
= 25 °C: P
D
T
STG
–65, +150 °C
PD25025F (flanged)
Figure 1. Available Packages
Features
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
•
Application Specific Performance, 2.5 GHz
Typical 2-Tone Performance
Average Load Power – 12.5 W
η
D
– 30%
Power Gain – 12.5 dB
IMD3: -30dBc @ -100kHz/ +100KHz
Table 3. ESD Rating*
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
•
Typical CW Performance
Average Load Power – 25 W
η
D
– 40%
Power Gain – 12.0 dB
•
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
PEAK [ PEAK ELECTRONICS GMBH ]
