Product Specification
PE4283
Product Description
The PE4283 RF Switch is designed to cover a broad range
of applications from DC through 4000 MHz. This reflective
switch integrates on-board CMOS control logic with a low
voltage CMOS-compatible control interface, and can be
controlled using either single-pin or complementary control
inputs. The PE4283 operates using a +3 volt power supply.
The PE4283 SPDT High Power RF Switch is manufactured
on Peregrine’s UltraCMOS™ process, a patented variation
of silicon-on-insulator (SOI) technology on a sapphire
substrate, offering the performance of GaAs with the
economy and integration of conventional CMOS.
Figure 1. Functional Diagram
RFC
SPDT High Power UltraCMOS™
DC – 4.0 GHz RF Switch
Features
•
Single-pin or complementary CMOS
logic control inputs
•
1.5 kV ESD tolerance
•
Low insertion loss: 0.65 dB at
1000 MHz, 0.70 dB at 2500 MHz
•
RFC-RF1/RF2 isolation of 33.5 dB at
1000 MHz, 21.5 dB at 2500 MHz
•
RF1-RF2 isolation of 37.5 dB at
1000 MHz, 22 dB at 2500 MHz
•
Typical input 1 dB compression point
of +32 dBm
•
Ultra-small SC-70 package
Figure 2. Package Type SC-70
RF1
RF2
6-lead SC-70
CMOS
Control
Driver
V1
V2
Table 1. Electrical Specifications @ +25 °C, V
DD
= 3 V
(Z
S
= Z
L
= 50
Ω
)
Parameter
Operation Frequency
1
Insertion Loss
DC - 4000
1000 MHz
2500 MHz
1000 MHz
2500 MHz
1000 MHz
2500 MHz
1000 MHz
2500 MHz
50% CTRL to 0.1 dB of final value, 1 GHz
50% CTRL to 25 dB isolation, 1 GHz
1000 MHz
1000 MHz, 20 dBm input power
30
31.5
19.5
35.5
20
Conditions
Min
DC
Typical
Max
4000
Units
MHz
dB
dB
dB
dB
dB
dB
dB
dB
0.65
0.70
33.5
21.5
37.5
22
19
16
0.725
0.625
+32
+53
0.75
0.80
Isolation: RFC - RF1/RF2
Isolation: RF1 - RF2
Return Loss
‘ON’ Switching Time
‘OFF’ Switching Time
Input 1 dB Compression
Input IP3
1.5
1.3
µs
µs
dBm
dBm
Note: 1. Device linearity will begin to degrade below 10 MHz.
Document No. 70-0177-04
│
www.psemi.com
©2005 Peregrine Semiconductor Corp. All rights reserved.
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