PE84140
Product Specification
Figure 3. Pin Configuration
Electrostatic Discharge (ESD) Precautions
This MOSFET device has minimally protected
inputs and is highly susceptible to ESD damage.
When handling this UTSi device, observe the same
precautions that you would use with other ESD-
sensitive devices.
Latch-Up Avoidance
LOM
LOP
GND
IFP
1
2
8
7
RFM
RFP
GND
IFM
PE84140
3
4
6
5
Unlike conventional CMOS devices, UTSi CMOS
devices are immune to latch-up.
Device Description
Table 2. Pin Descriptions
Pin
No.
1
2
3
4
5
6
7
8
Pin
Name
LOM
LOP
GND
IFP
IFM
GND
RFP
RFM
Description
LO Input Connection (Gate)
LO Input Connection (Gate)
Ground Connection
IF Output Connection (Drain)
IF Output Connection (Drain)
Ground Connection
RF Input Connection (Source)
RF Input Connection (Source)
The PE84140 passive broadband Quad MOSFET
array is designed for use in up-conversion and
down-conversion applications for high performance
systems.
The PE84140 is an ideal mixer core for a wide
range of mixer products, including module level
solutions that incorporate baluns or other single-
ended matching structures enabling three-port
operation.
The performance level of this passive mixer is
made possible by the very high linearity afforded by
Peregrine’s UTSi CMOS process.
Table 3. Absolute Maximum Ratings
Symbol
T
ST
T
OP
V
DC + AC
Parameter/Conditions
Storage temperature
range
Operating temperature
range
Maximum DC plus peak
AC voltage across Drain-
Source
Maximum DC plus peak
AC voltage across Gate-
Drain or Gate-Source
ESD Sensitive Device
Min
-65
-55
Max
150
125
±3.3
Units
°C
°C
V
V
DC+AC
V
ESD
±4.2
250
V
V
Copyright
Peregrine Semiconductor Corp. 2003
File No. 70/0127~00A
|
UTSi
CMOS RFIC SOLUTIONS
Page 2 of 5
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