Product Specification
PE4263 DIE
SP6T UltraCMOS™ 2.6 V Switch
100 – 3000 MHz
Figure 1. Functional Diagram
Features
•
Three pin CMOS logic control with
•
TX1
RX1
•
•
•
•
•
TX2
RX2
RX3
CMOS
Control/Driver
and ESD
RX4
integral decoder/driver
Low TX insertion loss: 0.55 dB at 900
MHz, 0.65 dB at 1900 MHz
TX – RX Isolation of 48 dB at 900 MHz,
40 dB at 1900 MHz
Low harmonics: 2f
o
= -85 dBc and
3f
o
= -72 dBc
1500 V HBM ESD tolerance all ports
41 dBm P1dB
No blocking capacitors required
Product Description
V1
V2
V3
Figure 2. Die Top View
RX1
GND
RX2
GND
GND
GND
RX3
GND
TX2
GND
RX4
GND
TX1
ANT
The PE4263 SP6T RF UltraCMOS™ Switch
addresses the specific design needs of the
Quad-Band GSM Handset Antenna Switch
Module Market. On-chip CMOS decode logic
facilitates three-pin low voltage CMOS control.
High ESD tolerance of 1500 V at all ports, no
blocking capacitor requirements and on-chip
SAW filter over-voltage protection devices
make this the ultimate in integration and
ruggedness.
The PE4263 UltraCMOS™ RF Switch is
manufactured in Peregrine’s patented Ultra
Thin Silicon (UTSi®) CMOS process, offering
the performance of GaAs with the economy
and integration of conventional CMOS.
GND
VDD
V3
GND
V2 V1
GND
Document No. 70-0175-02
│
www.psemi.com
NDA required for full version: Contact sales@psemi.com
©2005 Peregrine Semiconductor Corp. All rights reserved.
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