Dynamic Current - IDD [mA]
21098765432121098765432109876543210987654321210987654321098765432109876543212109876543210987654321098765432121098765432109876543210987654321
21098765432121098765432109876543210987654321210987654321098765432109876543212109876543210987654321098765432121098765432109876543210987654321
PI49FCT20802/PI49FCT20803
1:5/1:7 2.5V Clock Buffer for
Networking Applications
Power Supply Characteristics
Parame te rs
I
DDQ
∆I
DD
I
DD
De s cription
Quiescent Power Supply Current
Supply Current per Inputs
Dynamic Supply Current (See Graph 1)
Te s t Conditions
(4)
V
IN
= 0 or V
DD
V
IN
= V
DD
– 0.6V
(6)
V
DD
= 2.7V, 15pF & 33- ohm load,
f = 150 MHz
M in.
Typ.
(5)
0.1
47
136
M ax. Units
20
300
µA
mA
Notes:
4. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device.
5. Typical values are at V
DD
= 2.5V, +25°C ambient and maximum loading.
6. Per TTL driven input (V
IN
= V
DD
– 0.6V); all other inputs at V
DD
or GND.
Graph 1. Dynamic Current vs. Clock Frequency
160
140
120
100
80
60
40
20
0
0
50
100
Clock Frequency [MHz]
150
200
Load = 0
Load = 15pF & 33 ohms
Capacitance
(T
A
= 25°C, f = 1 MHz)
Parame te rs
C
IN
C
OUT
De s cription
Input Capacitance
Output Capacitance
Te s t Conditions
V
IN
= 0V
V
OUT
= 0V
Typ
(7)
3
M ax.
4
6
Units
pF
Note:
7. This parameter is determined by device characterization but is not production tested.
3
PS8560A
09/27/04
PERICOM [ PERICOM SEMICONDUCTOR CORPORATION ]
