PI49FCT3805D/E
3.3V, 2 x 1:5 CMOS Clock Driver
Capacitance
(T
A
= 25°C, f = 1 MHz)
Parameters
(1)
Description
Input Capacitance
Output Capacitance
Test Conditions
V
IN
= 0V
V
OUT
= 0V
Typ
3.0
—
Max.
4
6
Units
pF
C
IN
C
OUT
Note:
1. This parameter is determined by device characterization but is not production tested.
Power Supply Characteristics
Parameters
I
CC
I
DD
Description
Quiescent Power
Supply Current
Dynamic Supply
Current per Output
V
CC
= Max.
Test Conditions
(1)
V
IN
= GND or V
DD
Min.
Typ.
(2)
0.1
80
Max.
30
Units
V
CC
= 3.6V,
C
L
= 15pF,
All Outputs Toggling
V
CC
= 3.6V,
C
L
= 15pF,
All Outputs Toggling,
f
i
= 133 MHz
V
CC
= 3.6V,
C
L
= 15pF,
All Outputs Toggling,
f
i
= 166 MHz
V
CC
= Max.
V
IN
= V
CC
or GND
V
IN
= V
CC
-0.6V or GND
V
IN
= V
CC
or GND
V
IN
= V
CC
-0.6V or GND
V
IN
= V
CC
-0.6V
(3)
µA
120
135
135
160
160
300
µA
mA/
MHz
100
100
120
120
45
I
C
Total Power Supply
Current
∆I
CC
Supply Current per
inputs @ TTL High
Notes:
1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device.
2. Typical values are at V
CC
= 3.3V, +25°C ambient.
3. Per TTL driven input (V
IN
=
V
CC
– 0.6V);
all other inputs at V
CC
or GND.
3
PS8492C
09/08/04
PERICOM [ PERICOM SEMICONDUCTOR CORPORATION ]
