C30659-900nm Series
Table 1. Electrical Characteristics at T
A
=22ºC
Test Conditions: Ambient Temperature, V
amp
= ±5 Volts, HV = +V
R
(see Note 1), R
L
= 50Ω AC Coupled
900nm Silicon APD
Detector Type
C30659-900-R8A
(Si APD C30817E)
Min
Typ
Max
0.8
0.5
50
-
275
-1.8
-
-
-
2.2
Note 1
-2.1
2700
3000
82
-
435
-2.4
-
-
-
C30659-900-R5B
(Si APD C30902E)
Min
Typ
Max
0.5
0.2
200
-
180
-1.8
-
-
-
0.7
Note 1
-2.1
460
400
12
-
260
-2.4
-
-
-
Active Diameter
Active Area
Bandwidth Range
Temperature Coefficient of V
R
for constant Gain
VR for specified responsivity
Temperature sensor sensitivity
Responsivity
At 830nm
At 900nm
R
F
(Internal Feedback Resistor)
Noise Equivalent Power (NEP) (note 3)
f - 100 kHz,
∆f
= 1.0 Hz
At 830nm
At 900nm
Output Spectral Noise Voltage:
(f = 100 kHz - f
-3dB
)
Output Impedance
System Bandwidth, f
-3dB
Rise Time, t
r
(λ = 830 and 900nm)
10% to 90% points
Fall Time, t
f
(λ = 830 and 900nm)
90% to 10% points
Recovery time after overload (note 4)
Output Voltage Swing (1kΩ load) (note 5)
Output Voltage Swing (50Ω load) (note 5)
Output Offset Voltage
Positive Supply Current (V+)
Negative Supply Current (V-)
Notes: 1.
2.
3.
4.
5.
mm
mm
2
MHz
V/°C
V
mV/°C
kV/W
kV/W
k
Ω
-
-
-
33
40
-
-
-
2
0.7
-1
-
-
14
12
35
40
50
7
7
-
3
0.9
0.25
20
10
17
15
45
50
-
-
-
150
-
-
1
35
20
-
-
-
33
175
-
-
-
2
0.7
-1
-
-
35
40
15
40
200
2
2
-
3
0.9
0.25
20
10
55
65
25
50
-
-
-
150
-
-
1
35
20
fW/√Hz
fW/√Hz
nV/√Hz
Ω
MHz
ns
ns
ns
V
V
V
mA
mA
A specific value of V
R
is supplied with each device. The V
R
value will be within the specified ranges.
I
f
= 0.1 mA, 25°C
NEPmax is the Maximum Output Spectral Noise Voltage max divided by the typical Responsivity.
0dBm, 250ns pulse.
Pulsed operation.
w w w . o p t o e l e c t r o n i c s . p e r k i n e l m e r. c o m
Page 2
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