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C30737E-500 参数 Datasheet PDF下载

C30737E-500图片预览
型号: C30737E-500
PDF下载: 下载PDF文件 查看货源
内容描述: 外延硅雪崩光电二极管 [Epitaxial Silicon Avalanche Photodiode]
分类和应用: 光电二极管光电二极管
文件页数/大小: 5 页 / 98 K
品牌: PERKINELMER [ PERKINELMER OPTOELECTRONICS ]
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Optoelectronics
D A T A S H E E T
PRELIMINARY DATA SHEET
C30737
Epitaxial Silicon Avalanche Photodiode
Description
The C30737 type avalanche photodiode provides high
responsivity between 500 nm and 1000 nm, as well as
extremely fast rise times at all wavelengths with a
frequency response up to 1.0 GHz. The active area
diameters of the photosensitive surface are 0.23 mm
and 0.5mm. Other photosensitive diameters are also
available on a custom basis.
The detector chip is hermetically sealed behind a flat
glass window mounted in a TO-18 package. TO-18
plastic sealed packages and plastic surface mount
packages are additional options.
PerkinElmer Optoelectronics is committed to supplying
the highest quality products to our customers. Certified
to meet ISO 9001, the Epitaxial series is designed to
satisfy MIL-STD-883 and/or MIL-STD-750.
Applications
Range Finding
Optical communication systems
Features
Low cost
0.23 mm and 0.5mm active
diameter
High gain at low bias voltage
Low breakdown voltage
Fast response
Low noise
optoelectronics.perkinelmer.com
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