VTB Process Photodiodes
VTB5051B
PACKAGE DIMENSIONS
inch (mm)
CASE 14 TO-5 HERMETIC
CHIP ACTIVE AREA: .023 in
2
(14.8 mm
2
)
PRODUCT DESCRIPTION
Planar silicon photodiode in a “flat” window, dual
lead TO-5 package. The package incorporates
an infrared rejection filter. Cathode is common to
the case. These diodes have very high shunt
resistance and have good blue response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40°C to 110°C
-40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also VTB curves, pages 21-22)
VTB5051B
SYMBOL
I
SC
TC I
SC
V
OC
TC V
OC
I
D
R
SH
TC R
SH
C
J
λ
range
λ
p
V
BR
θ
1/2
NEP
D*
CHARACTERISTIC
Short Circuit Current
I
SC
Temperature Coefficient
Open Circuit Voltage
V
OC
Temperature Coefficient
Dark Current
Shunt Resistance
R
SH
Temperature Coefficient
Junction Capacitance
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
2
TEST CONDITIONS
Min.
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 2.0 V
H = 0, V = 10 mV
H = 0, V = 10 mV
H = 0, V = 0
330
580
40
±50
3.7 x 10
-14
(Typ.)
13
(Typ.)
UNITS
Typ.
13
.02
420
-2.0
250
.56
-8.0
3.0
720
.08
Max.
µA
%/°C
mV
mV/°C
pA
GΩ
%/°C
nF
nm
nm
V
Degrees
W
⁄
Hz
cm Hz / W
8
1.0 x 10
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
30
PERKINELMER [ PERKINELMER OPTOELECTRONICS ]
