VTB Process Photodiodes
VTB6061J
PACKAGE DIMENSIONS
inch (mm)
PRODUCT DESCRIPTION
Large area planar silicon photodiode in a “flat”
window, three lead TO-8 package. Chip is
isolated from case. The third lead allows case to
be grounded. These diodes have very high
shunt resistance and have good blue response.
CASE 15 TO-8 HERMETIC
CHIP ACTIVE AREA: .058 in
2
(37.7 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40°C to 110°C
-40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also VTB curves, pages 21-22)
VTB6061J
SYMBOL
I
SC
TC I
SC
V
OC
TC V
OC
I
D
R
SH
TC R
SH
C
J
S
R
λ
range
λ
p
V
BR
θ
1/2
NEP
D*
CHARACTERISTIC
Short Circuit Current
I
SC
Temperature Coefficient
Open Circuit Voltage
V
OC
Temperature Coefficient
Dark Current
Shunt Resistance
R
SH
Temperature Coefficient
Junction Capacitance
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
2
TEST CONDITIONS
Min.
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 2.0 V
H = 0, V = 10 mV
H = 0, V = 10 mV
H = 0, V = 0
365 nm
320
920
40
±55
5.7 x 10
-14
(Typ.)
1.1 x 10
13
(Typ.)
.10
-8.0
8.0
0.1
1100
260
Typ.
350
.12
490
-2.0
2.0
.23
Max.
µA
%/°C
mV
mV/°C
nA
GΩ
%/°C
nF
A/W
nm
nm
V
Degrees
W
⁄
Hz
cm Hz / W
UNITS
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
37
PERKINELMER [ PERKINELMER OPTOELECTRONICS ]
